New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flightJUSKA, G; GENEVICIUS, K; VILIUNAS, M et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 331-335, issn 0022-3093, 5 p., aConference Paper

Drift-mobility characterization of silicon thin-film solar cells using photocapacitanceLEE, J.-K; HAMZA, A. M; DINCA, S et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2194-2197, issn 0022-3093, 4 p.Conference Paper

Ultra high hole mobilities in a pure strained Ge quantum wellMIRONOV, O. A; HASSAN, A. H. A; BERKUTOV, I. B et al.Thin solid films. 2014, Vol 557, pp 329-333, issn 0040-6090, 5 p.Conference Paper

Link between enhanced carrier mobilities and DOS profiles in a-Si:HBRINZA, Monica; EMELIANOVA, Evguenia V; ADRIAENSSENS, Guy J et al.Thin solid films. 2006, Vol 511-12, pp 593-597, issn 0040-6090, 5 p.Conference Paper

Analysis of time-of-flight transient photocurrent in organic semiconductors with coplanar-blocking-electrodes configurationYOSHIKAWA, Takao; NAGASE, Takashi; KOBAYASHI, Takashi et al.Thin solid films. 2008, Vol 516, Num 9, pp 2595-2599, issn 0040-6090, 5 p.Conference Paper

Single crystal diamond for electronic applicationsISBERG, J; HAMMERSBERG, J; TWITCHEN, D. J et al.Diamond and related materials. 2004, Vol 13, Num 2, pp 320-324, issn 0925-9635, 5 p.Conference Paper

Limiting field strength and electron swarm coefficients of the CF₃I-SF₆ gas mixtureDE URQUIJO, J; MITRANI, A; RUIZ-VARGAS, G et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 34, issn 0022-3727, 342001.1-342001.3Article

The change of transport mechanism in μc-Si:H films induced by H₂-diluted silane plasmaSHAOYUN HUANG; LI WANG; GANGULY, Gautam et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 347-351, issn 0022-3093, 5 p., aConference Paper

Hole drift mobilities in the glassy state of arylaldehyde and arylketone hydrazonesNISHIMURA, K; INADA, H; KOBATA, T et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 235-242, issn 1056-8816Conference Paper

Modeling of Spatially-Dispersive Wire Media: Transport Representation, Comparison With Natural Materials, and Additional Boundary ConditionsHANSON, George W; FORATI, Ebrahim; SILVEIRINHA, Mário G et al.IEEE transactions on antennas and propagation. 2012, Vol 60, Num 9, pp 4219-4232, issn 0018-926X, 14 p.Article

Study of electrical and dielectric behavior of Tb⁺³ substituted Y-type hexagonal ferriteALI, Irshad; SHAHEEN, Nasira; ISLAM, M. U et al.Journal of alloys and compounds. 2014, Vol 617, pp 863-868, issn 0925-8388, 6 p.Article

Solution of the μτ problem in a-Si HKOCKA, J; NEBEL, C. E; ABEL, C. D et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 221-246, issn 0958-6644, 26 p.Article

Theoretical studies of the low-temperature drift mobility in a-Si :HHEUCKEROTH, V; OVERHOF, H; SCHUMACHER, R et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 193-200, issn 0958-6644, 8 p.Article

Phototransport under the presence of a small steady-state photocarrier gratingYUAN-MIN LI.Physical review. B, Condensed matter. 1990, Vol 42, Num 14, pp 9025-9032, issn 0163-1829, 8 p.Article

Influence of deposition parameters on hole mobility in polymorphous siliconBRINZA, M; ADRIAENSSENS, G. J; ABRAMOV, A et al.Thin solid films. 2007, Vol 515, Num 19, pp 7504-7507, issn 0040-6090, 4 p.Conference Paper

Time-of-flight measurements of carrier drift mobilities in polymorphous siliconBRINZA, M; ADRIAENSSENS, G. J; ROCA I. CABARROCAS, P et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 123-126, issn 0040-6090, 4 p.Conference Paper

An argument for potential fluctuations in amorphous-silicon-based alloys, and their effect on solar cell performanceVON ROEDERN, B; MADAN, A.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 293-303, issn 0958-6644, 11 p.Article

Synthesis of new hole-transporting molecular glass with pendant carbazolyl moietiesBUBNIENE, Giedre; MALINAUSKAS, Tadas; GETAUTIS, Vytautas et al.Synthetic metals. 2008, Vol 158, Num 16, pp 670-675, issn 0379-6779, 6 p.Article

Phenyl-, carbazolyl- and fluorenyl-substituted derivatives of indolo[3,2-b]carbazole as hole-transporting glass forming materialsKIRKUS, M; SIMOKAITIENE, J; GRAZULEVICIUS, J. V et al.Synthetic metals. 2010, Vol 160, Num 7-8, pp 750-755, issn 0379-6779, 6 p.Article

New hole-transporting dihydrazonesJASIUKAITYTE, E; OSTRAUSKAITE, J; GRAZULEVICIUS, J. V et al.Synthetic metals. 2005, Vol 155, Num 1, pp 180-184, issn 0379-6779, 5 p.Article

3,6-Di(diphenylamino)-9-alkylcarbazole-based hole-transporting hydrazonesKLEJEVSKAJAA, B; BURBULIS, E; MICHALEVICIUTE, A et al.Synthetic metals. 2007, Vol 157, Num 22-23, pp 968-973, issn 0379-6779, 6 p.Article

Effective electron drift mobility in multiwalled carbon nanotubesGRADO-CAFFARO, M. A; GRADO-CAFFARO, M.Optik (Stuttgart). 2010, Vol 121, Num 19, pp 1775-1776, issn 0030-4026, 2 p.Article

Exploring the limits of superlattice miniband engineering using inverse scatteringROURKE, D. E; WILKINSON, P. B; FROMHOLD, T. M et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S91-S93, issn 0268-1242Conference Paper

Ozone sensors based on WO₃: a model for sensor drift and a measurement correction methodALIWELL, S. R; HALSALL, J. F; PRATT, K. F. E et al.Measurement science & technology (Print). 2001, Vol 12, Num 6, pp 684-690, issn 0957-0233Article

Electron drift mobility in porous TiO2 (anatase)DITTRICH, T; LEBEDEV, E. A; WEIDMANN, J et al.Physica status solidi. A. Applied research. 1998, Vol 165, Num 2, pp R5-R6, issn 0031-8965Article